Jörg Schulze

According to our database1, Jörg Schulze authored at least 35 papers between 2005 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2022
Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si.
Microelectron. J., 2022

GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection.
Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

Electroluminescence of Si<sub>x</sub>Ge<sub>1-x-y</sub>Sn<sub>y</sub>/Ge<sub>1-y</sub>Sn<sub>y</sub> pin-Diodes Grown on a GeSn Buffer.
Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

2021
Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics.
Proceedings of the 44th International Convention on Information, 2021

Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy.
Proceedings of the 44th International Convention on Information, 2021

Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures.
Proceedings of the 44th International Convention on Information, 2021

MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate.
Proceedings of the 44th International Convention on Information, 2021

Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy.
Proceedings of the 44th International Convention on Information, 2021

Titanium and Nickel as alternative materials for mid Infrared Plasmonic.
Proceedings of the 44th International Convention on Information, 2021

2020
Ge-on-Si Avalanche Photodiodes for LIDAR Applications.
Proceedings of the 43rd International Convention on Information, 2020

Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers.
Proceedings of the 43rd International Convention on Information, 2020

Processing sequence for a PureB bipolar junction transistor.
Proceedings of the 43rd International Convention on Information, 2020

2019
Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019

Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019

Electrical Characterization of pure Boron-on-Germanium pin Diodes.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019

Electrical Characterization of Low-Temperature Boron on Silicon Deposition utilizing Molecular Beam Epitaxy.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019

A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector.
Proceedings of the 2019 IEEE SENSORS, Montreal, QC, Canada, October 27-30, 2019, 2019

Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018
Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018

Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001).
Proceedings of the 41st International Convention on Information and Communication Technology, 2018

Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018

Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018

2017
Impact of Sn segregation on Ge1-xSnx epi-layers growth by RP-CVD.
Proceedings of the 40th International Convention on Information and Communication Technology, 2017

Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy.
Proceedings of the 40th International Convention on Information and Communication Technology, 2017

Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges.
Proceedings of the 40th International Convention on Information and Communication Technology, 2017

Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates.
Proceedings of the 40th International Convention on Information and Communication Technology, 2017

2016
(Si)GeSn nanostructures for optoelectronic device applications.
Proceedings of the 39th International Convention on Information and Communication Technology, 2016

Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015
Expression tasks for novice programmers: Turning the attention to objectivity, reliability and validity.
Proceedings of the 2015 IEEE Frontiers in Education Conference, 2015

2014
Rethinking task types for novice programmers.
Proceedings of the IEEE Frontiers in Education Conference, 2014

2012
Dual spherical spline: A new representation of ruled surface optimization.
Proceedings of the 12th International Conference on Control Automation Robotics & Vision, 2012

2011
Tool Path Planning in Flank Milling based on Dual Spherical Spline.
Proceedings of the GRAPP 2011, 2011

2010
Blade geometry design with kinematic ruled surface approximation.
Proceedings of the 2010 ACM Symposium on Applied Computing (SAC), 2010

2005
Examination and evaluation of La<sub>2</sub>O<sub>3</sub> as gate dielectric for sub-100nm CMOS and DRAM technology.
Microelectron. Reliab., 2005

Der Funktions-Fragment-Checker: eine effektive Übungsumgebung für C#-Programmieranfänger.
Proceedings of the Marktplatz Internet: von E-Learning bis E-Payment, 2005


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