Dongqing Hu

Orcid: 0000-0002-2793-3594

According to our database1, Dongqing Hu authored at least 12 papers between 2018 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Automated Region Learning Via Cell-Level Labels to Modify Cell Detection Process For Histopathological Images.
Proceedings of the 20th IEEE International Symposium on Biomedical Imaging, 2023

Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension.
Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering, 2023

Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure.
Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering, 2023

2022
Invariant Content Synergistic Learning for Domain Generalization of Medical Image Segmentation.
CoRR, 2022

Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022

Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022

A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022

2021
Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer.
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021

3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET.
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021

Boosting Boundary Representation for Gland Instance Segmentation.
Proceedings of the IEEE International Conference on Bioinformatics and Biomedicine, 2021

2020
Electrical Parameters Degradation of E-mode GaN Under Repeated Short-Circuit Impacts.
Proceedings of the EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020, 2020

2018
Micro-Raman spectroscopy applied in crystal structure analysis on the ESD failure mechanism of SiC JBS diodes.
Microelectron. Reliab., 2018


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