Yu Wu

Orcid: 0000-0002-5847-946X

Affiliations:
  • Beijing University of Technology, Faculty of Information Technology, State Key Laboratory of Advanced Power Transmission Technology, Beijing, China


According to our database1, Yu Wu authored at least 15 papers between 2018 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension.
Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering, 2023

Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure.
Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering, 2023

2022
Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022

Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022

Design and Simulation of 1.2kV Semi-Super Junction FRD with Vertical Variation Doping.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022

A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022

2021
The Reverse Recovery Characteristics of an Improved 3.3-kV CIBH Diode with Local Heavily Doped N++ Regions at the Cathode.
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021

High voltage CIBH diodes with new structure on the cathode side of the edge.
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021

3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET.
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021

Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET.
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021

Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping.
Proceedings of the EITCE 2021: 5th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, October 22, 2021

2020
Influence of Backside p-Region Width on the Overcurrent Reverse Recovery of High-voltage RFC Diodes.
Proceedings of the EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020, 2020

Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode.
Proceedings of the EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020, 2020

The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode.
Proceedings of the EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020, 2020

2018
Micro-Raman spectroscopy applied in crystal structure analysis on the ESD failure mechanism of SiC JBS diodes.
Microelectron. Reliab., 2018


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