Dzuhri Radityo Utomo

Orcid: 0000-0002-0367-3556

Affiliations:
  • Universitas Gadjah Mada, Yogyakarta, Indonesia
  • KAIST, Yuseong-gu, Daejeon, South Korea (former)


According to our database1, Dzuhri Radityo Utomo authored at least 13 papers between 2017 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

Online presence:

On csauthors.net:

Bibliography

2022
A Fully Integrated 490-GHz CMOS Receiver Adopting Dual-Locking Receiver-Based FLL.
IEEE J. Solid State Circuits, 2022

2021
A 27 dB Sidelobe Suppression, 1.12 GHz BW<sub>-10dB</sub> UWB Pulse Generator With Process Compensation.
IEEE Trans. Circuits Syst. II Express Briefs, 2021

Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-G<sub>max</sub> Gain Boosting Technique.
IEEE J. Solid State Circuits, 2021

A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax-Core.
IEEE Access, 2021

2020
An 80 MHz Bandwidth and 26.8 dBm OOB IIP3 Transimpedance Amplifier With Improved Nested Feedforward Compensation and Multi-Order Filtering.
IEEE Trans. Circuits Syst., 2020

A 293/440 GHz Push-Push Double Feedback Oscillators with 5.0/-3.9 dBm Output Power and 2.9/0.6 % DC-to-RF Efficiency in 65 nm CMOS.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020

A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020

29.7 A 490GHz 32mW Fully Integrated CMOS Receiver Adopting Dual-Locking FLL.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

2019
A 230-260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak $G_{{\mathrm{max}}}$ -Core.
IEEE J. Solid State Circuits, 2019

2018
A 22.8-to-32.4 GHz Injection-locked Frequency Tripler with Source Degeneration.
Proceedings of the International SoC Design Conference, 2018

Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology.
Proceedings of the International SoC Design Conference, 2018

A 230-260GHz wideband amplifier in 65nm CMOS based on dual-peak Gmax-core.
Proceedings of the 23rd Asia and South Pacific Design Automation Conference, 2018

2017
The Evolution of Channelization Receiver Architecture: Principles and Design Challenges.
IEEE Access, 2017


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