Ephrem G. Gebreselasie

According to our database, Ephrem G. Gebreselasie authored at least 4 papers between 2006 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs.

Dimitris P. Ioannou, Ephrem G. Gebreselasie, Vinh Pham, Uppili S. Raghunathan

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2019

Ballast Resistor Temperature Effect and Ruggedness.

Yves Ngu, Ephrem G. Gebreselasie, Rajendran Krishnasamy, Rick Rassel

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2008

Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications.

Alvin J. Joseph, John D. Gillis, Mark Doherty, Peter J. Lindgren, Rosemary A. Previti-Kelly, Ramana M. Malladi, Ping-Chuan Wang, Mete Erturk, Hanyi Ding, Ephrem G. Gebreselasie, Michael J. McPartlin, James S. Dunn

IBM J. Res. Dev., 2008

2006

SiGe BiCMOS Trends - Today and Tomorrow.

James S. Dunn, David L. Harame, Alvin J. Joseph, Stephen A. St. Onge, Natalie B. Feilchenfeld, Louis D. Lanzerotti, Bradley A. Orner, Ephrem G. Gebreselasie, Jeffrey B. Johnson, Douglas D. Coolbaugh, Rick Rassel, Marwan Khater

Proceedings of the IEEE 2006 Custom Integrated Circuits Conference, 2006