Dimitris P. Ioannou

According to our database1, Dimitris P. Ioannou authored at least 7 papers between 2014 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2010, "For contributions to reliability and characterization of silicon-on-insulator devices and materials".

Timeline

Legend:

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In proceedings 
Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022
Robust Off-State TDDB Reliability of n-LDMOS.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021
Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020
Physics of Hot Carrier Degradation Under Saturation Mode Operation in SiGe HBTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2018
Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2014
HKMG CMOS technology qualification: The PBTI reliability challenge.
Microelectron. Reliab., 2014


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