F. Schwierz

According to our database, F. Schwierz authored at least 4 papers between 1996 and 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of four.

2007

Performance trends of Si-based RF transistors.

F. Schwierz, C. Schippel

Microelectron. Reliab., 2007

Simulation of boron diffusion in Si and strained SiGe layers.

R. Kinder, F. Schwierz, P. Beno, J. Geßner

Microelectron. J., 2007

2001

Semiconductor devices for RF applications: evolution and current status.

F. Schwierz, Juin J. Liou

Microelectron. Reliab., 2001

1996

Effects of Ge profiles on base transit time and base resistance of SiGe HBT's.

J. Song, J. S. Yuan, F. Schwierz, D. Schipanski

Proceedings of Third International Conference on Electronics, Circuits, and Systems, 1996