Farbod Ebrahimi

According to our database, Farbod Ebrahimi authored at least 4 papers between 2016 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2018

A Dual-Data Line Read Scheme for High-Speed Low-Energy Resistive Nonvolatile Memories.

Albert Lee, Hochul Lee, Farbod Ebrahimi, Bonnie Lam, Wei-Hao Chen, Meng-Fan Chang, Pedram Khalili Amiri, Kang-Lung Wang

IEEE Trans. Very Large Scale Integr. Syst., 2018

2017

A Word Line Pulse Circuit Technique for Reliable Magnetoelectric Random Access Memory.

Hochul Lee, Albert Lee, Shaodi Wang, Farbod Ebrahimi, Puneet Gupta, Pedram Khalili Amiri, Kang L. Wang

IEEE Trans. Very Large Scale Integr. Syst., 2017

2016

Comparative Evaluation of Spin-Transfer-Torque and Magnetoelectric Random Access Memory.

Shaodi Wang, Hochul Lee, Farbod Ebrahimi, P. Khalili Amiri, Kang L. Wang, Puneet Gupta

IEEE J. Emerg. Sel. Topics Circuits Syst., 2016

Ultra-low-power, high-density spintronic programmable logic (SPL).

Kang L. Wang, Hochul Lee, Farbod Ebrahimi, Pedram Khalili Amiri

Proceedings of the IEEE International Symposium on Circuits and Systems, 2016