Farzaneh Izadinasab

According to our database, Farzaneh Izadinasab authored at least 3 papers between 2021 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins.

Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour

IEEE Trans. Circuits Syst. I Regul. Pap., 2022

2021

Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology.

Farzaneh Izadinasab, Morteza Gholipour

Microelectron. J., 2021

Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design.

Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab

Int. J. Circuit Theory Appl., 2021