G. Despesse

According to our database, G. Despesse authored at least 2 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2023

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs.

Camille Leurquin, William Vandendaele, Romain Gwoziecki, B. Mohamad, G. Despesse, Ferdinando Iucolano, Roberto Modica, A. Constant

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage.

Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, G. Despesse, Ferdinando Iucolano, Roberto Modica, A. Constant

Proceedings of the IEEE International Reliability Physics Symposium, 2022