René Escoffier

According to our database, René Escoffier authored at least 3 papers between 2009 and 2022.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2022

Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage.

Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, G. Despesse, Ferdinando Iucolano, Roberto Modica, A. Constant

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2018

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT.

William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, A. Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, Fred Gaillard

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2009

Source electrode evolution of a low voltage power MOSFET under avalanche cycling.

B. Bernoux, René Escoffier, P. Jalbaud, Jean-Marie Dorkel

Microelectron. Reliab., 2009