Gerhard K. M. Wachutka

According to our database, Gerhard K. M. Wachutka authored at least 14 papers between 1990 and 2023.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2023

High-Throughput Apparatus for Semiconductor Device Characterization in a Magnetic Field at Extreme High Temperatures.

Hesham Okeil, Gabriele Schrag, Gerhard K. M. Wachutka

IEEE Trans. Instrum. Meas., 2023

2017

Transient analysis of latent damage formation in SMD capacitors by Transmission Line Pulsing (TLP).

Dennis Helmut, Gerhard K. M. Wachutka, Gerhard Groos

Microelectron. Reliab., 2017

2013

Evaluation of thermal transient characterization methodologies for high-power LED applications.

Stefan Müller, Thomas Zahner, Frank Singer, Gabriele Schrag, Gerhard K. M. Wachutka

Microelectron. J., 2013

The art of modeling and predictive simulation in power electronics and microsystems.

Gerhard K. M. Wachutka

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013

2009

Combination of thermal subsystems by use of rapid circuit transformation and extended two-port theory.

Y. C. Gerstenmaier, W. Kiffe, Gerhard K. M. Wachutka

Microelectron. J., 2009

2008

Testing semiconductor devices at extremely high operating temperatures.

Peter Borthen, Gerhard K. M. Wachutka

Microelectron. Reliab., 2008

Virtual Prototyping of Microdevices and Microsystems.

Gerhard K. M. Wachutka

Proceedings of the Distributed Intelligent Systems and Technologies Workshop, 2008

2006

Thermal characterisation of power devices during transient operation.

Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard K. M. Wachutka

Microelectron. J., 2006

2004

Corrections to "Physically Rigorous Modeling of Internal Laser-Probing Techniques for Microstructured Semiconductor Devices".

Robert K. Thalhammer, Gerhard K. M. Wachutka

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2004

Physically rigorous modeling of internal laser-probing techniques for microstructured semiconductor devices.

Robert K. Thalhammer, Gerhard K. M. Wachutka

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2004

Reliability of power electronic devices against cosmic radiation-induced failure.

Gerald Sölkner, Winfried Kaindl, Hans-Joachim Schulze, Gerhard K. M. Wachutka

Microelectron. Reliab., 2004

2003

Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation.

A. Icaza Deckelmann, Gerhard K. M. Wachutka, Franz Hirler, J. Krumrey, R. Henninger

Microelectron. Reliab., 2003

1994

Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices.

Philip B. M. Wolbert, Gerhard K. M. Wachutka, Benno H. Krabbenborg, Ton J. Mouthaan

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1994

1990

Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling.

Gerhard K. M. Wachutka

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1990