Alberto Castellazzi

According to our database, Alberto Castellazzi authored at least 47 papers between 2002 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Defect Detection in Double-Sided Cooled Power Modules by Structure Functions.

Ciro Scognamillo, Antonio Pio Catalano, Vincenzo d'Alessandro, Lorenzo Codecasa, Alberto Castellazzi

Proceedings of the 17th Conference on Ph.D Research in Microelectronics and Electronics, 2022

2019

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate.

Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules.

Fausto Stella, Olufisayo Olanrewaju, Zineng Yang, Alberto Castellazzi, Gianmario Pellegrino

Microelectron. Reliab., 2018

Impact of underfill and other physical dimensions on Silicon Lateral IGBT package reliability using computer model with discrete and continuous design variables.

Pushparajah Rajaguru, H. Lu, Chris Bailey, Alberto Castellazzi, V. Pathirana, N. Udugampola, Florin Udrea

Microelectron. Reliab., 2018

Avalanche ruggedness of parallel SiC power MOSFETs.

Asad Fayyaz, Besar Asllani, Alberto Castellazzi, Michele Riccio, Andrea Irace

Microelectron. Reliab., 2018

<i>V</i>_<i>TH</i> subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs.

Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson

Microelectron. Reliab., 2018

GaN transistors efficient cooling by graphene foam.

Mattia Antonini, Paolo Cova, Nicola Delmonte, Alberto Castellazzi

Microelectron. Reliab., 2018

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs.

Alberto Castellazzi, Asad Fayyaz, Siwei Zhu, Thorsten Oeder, Martin Pfost

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Evaluation of SiC Schottky Diodes Using Pressure Contacts.

Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Attahir Murtala Aliyu, Pushparajah Rajaguru, Alberto Castellazzi, Li Ran, Philip Mawby, Chris Bailey

IEEE Trans. Ind. Electron., 2017

Electrical and thermal failure modes of 600 V p-gate GaN HEMTs.

Thorsten Oeder, Alberto Castellazzi, Martin Pfost

Microelectron. Reliab., 2017

Thermal design and characterization of a modular integrated liquid cooled 1200 V-35 A SiC MOSFET bi-directional switch.

Paolo Cova, Attahir Murtala Aliyu, Alberto Castellazzi, Diego Chiozzi, Nicola Delmonte, P. Lasserre, N. Pignoloni

Microelectron. Reliab., 2017

Measuring structure functions of power devices in inverters.

Attahir Murtala Aliyu, Alberto Castellazzi

Microelectron. Reliab., 2017

2016

Observer based dynamic adaptive cooling system for power modules.

Xiang Wang, Alberto Castellazzi, Pericle Zanchetta

Microelectron. Reliab., 2016

Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules.

Jose Angel Ortiz Gonzalez, Attahir Murtala Aliyu, Olayiwola Alatise, Alberto Castellazzi, Li Ran, Phil Mawby

Microelectron. Reliab., 2016

Body diode reliability investigation of SiC power MOSFETs.

Asad Fayyaz, Gianpaolo Romano, Alberto Castellazzi

Microelectron. Reliab., 2016

Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability.

Paolo Cova, Nicola Delmonte, Adane Kassa Solomon, Alberto Castellazzi

Microelectron. Reliab., 2016

SiC power MOSFETs performance, robustness and technology maturity.

Alberto Castellazzi, Asad Fayyaz, Gianpaolo Romano, Li Yang, Michele Riccio, Andrea Irace

Microelectron. Reliab., 2016

Novel multilevel hybrid inverter topology with power scalability.

Emre Gurpinar, Alberto Castellazzi

Proceedings of the IECON 2016, 2016

2015

High temperature pulsed-gate robustness testing of SiC power MOSFETs.

Asad Fayyaz, Alberto Castellazzi

Microelectron. Reliab., 2015

GaN-based consumer application DC-DC converter for PCB embedment technology integration.

Antonio D. Martínez-Pérez, Adane Kassa Solomon, Alberto Castellazzi, Bing Lu

Proceedings of the IECON 2015, 2015

2014

Overload robust IGBT design for SSCB application.

Ihsan Supono, Jesús Urresti, Alberto Castellazzi, David Flores

Microelectron. Reliab., 2014

Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design.

Francesco Giuliani, De Dipankar, Nicola Delmonte, Alberto Castellazzi, Paolo Cova

Microelectron. Reliab., 2014

Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs.

Asad Fayyaz, Li Yang, Michele Riccio, Alberto Castellazzi, Andrea Irace

Microelectron. Reliab., 2014

Full-order observer based IGBT temperature online estimation.

Xiang Wang, Alberto Castellazzi, Pericle Zanchetta

Proceedings of the IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society, Dallas, TX, USA, October 29, 2014

2013

High temperature gate-bias and reverse-bias tests on SiC MOSFETs.

Li Yang, Alberto Castellazzi

Microelectron. Reliab., 2013

Experimental analysis of electro-thermal instability in SiC Power MOSFETs.

Michele Riccio, Alberto Castellazzi, Giuseppe De Falco, Andrea Irace

Microelectron. Reliab., 2013

Performance evaluation of normaly-off SiC JFET in matrix converter without antiparrallel diodes.

Saeed Safari, Alberto Castellazzi, Pat Wheeler

Proceedings of the IECON 2013, 2013

2012

Repetitive high peak current pulsed discharge film-capacitor reliability testing.

H. Q. S. Dang, Martin R. Corfield, Alberto Castellazzi, C. Mark Johnson, Patrick Wheeler

Microelectron. Reliab., 2012

Thermal instability effects in SiC Power MOSFETs.

Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara

Microelectron. Reliab., 2012

A closed-loop IGBT non-destructive tester.

Ashraf Ahmed, Yasaman Shadrokh, Lee Coulbeck, Alberto Castellazzi, C. Mark Johnson

Microelectron. Reliab., 2012

Circuit design and experimental test of a high power IGBT non-destructive tester.

Ashraf Ahmed, Alberto Castellazzi, L. Coulbeck, M. C. Johnson

Microelectron. Reliab., 2012

Design and test of a high power IGBT non-destructive tester.

Ashraf Ahmed, Alberto Castellazzi, L. Coulbeck, M. C. Johnson

Proceedings of the 21st IEEE International Symposium on Industrial Electronics, 2012

2011

A study of SiC Power BJT performance and robustness.

Alberto Castellazzi, T. Takuno, R. Onishi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara

Microelectron. Reliab., 2011

Dynamic active cooling for improved power system reliability.

Alberto Castellazzi, Wei Juin Choy, Pericle Zanchetta

Microelectron. Reliab., 2011

2010

Control technique for power device electro-thermal stress minimisation in non-linear load variable-frequency resonant power converters.

Fabio Carastro, Alberto Castellazzi, Jon C. Clare, Patrick Wheeler

Microelectron. Reliab., 2010

2009

Reliability considerations in pulsed power resonant conversion.

Fabio Carastro, Alberto Castellazzi, Jon C. Clare, M. C. Johnson, Michael J. Bland, Patrick W. Wheeler

Microelectron. Reliab., 2009

2008

Novel simulation approach for transient analysis and reliable thermal management of power devices.

Alberto Castellazzi, Mauro Ciappa

Microelectron. Reliab., 2008

2007

Robustness test and failure analysis of IGBT modules during turn-off.

Jesús Urresti-Ibañez, Alberto Castellazzi, M. Piton, José Rebollo, Michel Mermet-Guyennet, Mauro Ciappa

Microelectron. Reliab., 2007

Virtual reliability assessment of integrated power switches based on multi-domain simulation approach.

Pierre Solomalala, J. Saiz, Michel Mermet-Guyennet, Alberto Castellazzi, Mauro Ciappa, X. Chauffleur, Jean-Pierre Fradin

Microelectron. Reliab., 2007

Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities.

X. Perpiñà, Alberto Castellazzi, M. Piton, Michel Mermet-Guyennet, José Millán

Microelectron. Reliab., 2007

A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs.

Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, M. Piton, Michel Mermet-Guyennet

Microelectron. Reliab., 2007

2006

Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications.

Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, G. Lourdel, Michel Mermet-Guyennet

Microelectron. Reliab., 2006

New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions.

Davide Barlini, Mauro Ciappa, Alberto Castellazzi, Michel Mermet-Guyennet, Wolfgang Fichtner

Microelectron. Reliab., 2006

Thermal characterisation of power devices during transient operation.

Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard K. M. Wachutka

Microelectron. J., 2006

2004

Analysis of PowerMOSFET chips failed in thermal instability.

Alberto Castellazzi, H. Schwarzbauer, Doris Schmitt-Landsiedel

Microelectron. Reliab., 2004

2003

Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET's.

Alberto Castellazzi, V. Kartal, R. Kraus, Norbert Seliger, Martin Honsberg-Riedl, Doris Schmitt-Landsiedel

Microelectron. Reliab., 2003

2002

Reliability analysis of power MOSFET's with the help of compact models and circuit simulation.

Alberto Castellazzi, R. Kraus, Norbert Seliger, Doris Schmitt-Landsiedel

Microelectron. Reliab., 2002