Giovanni Ghione

Orcid: 0000-0002-2362-6458

According to our database1, Giovanni Ghione authored at least 10 papers between 1990 and 2020.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Awards

IEEE Fellow

IEEE Fellow 2007, "For contributions to numerical physics-based modelling of passive and active integrated microwave components".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2020
Generalized Symmetrical 3 dB Power Dividers With Complex Termination Impedances.
IEEE Access, 2020

2015
Modeling challenges for high-efficiency visible light-emitting diodes.
Proceedings of the 1st IEEE International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow, 2015

2014
13-bit GaAs serial-to-parallel converter with compact layout for core-chip applications.
Microelectron. J., 2014

Evaluating GaN Doherty architectures for 4G Picocells, WiMax and microwave backhaul links.
Proceedings of the IEEE 11th International Multi-Conference on Systems, Signals & Devices, 2014

2006
Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes.
Microelectron. J., 2006

2001
Simplex Algorithm for Band Structure Calculation of Noncubic Symmetry Semiconductors: Application to III-nitride Binaries and Alloys.
VLSI Design, 2001

A new analytical model for high frequency MOSFET noise.
Proceedings of the IEEE 2001 Custom Integrated Circuits Conference, 2001

A new dynamic, self-consistent electro-thermal model of power HBTs and a novel interpretation of thermal collapse loci in multi-finger devices.
Proceedings of the IEEE 2001 Custom Integrated Circuits Conference, 2001

1993
A computationally efficient unified approach to the numerical analysis of the sensitivity and noise of semiconductor devices.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1993

1990
An extended majority-carrier approach for the DC and small-signal simulation of ion-implanted mesfets on compensated and p-type substrates.
Eur. Trans. Telecommun., 1990


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