Giovanni Verzellesi

According to our database, Giovanni Verzellesi authored at least 12 papers between 2001 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs.

Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci, Giovanni Verzellesi, Paolo Pavan, Alessandro Chini

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs.

Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Characterization of a premixed flat combustor through plasma current measurements.

Luca Pintori, Giovanni Verzellesi, Luigi Rovati

Proceedings of the 2020 IEEE International Instrumentation and Measurement Technology Conference, 2020

2017

Variability and sensitivity to process parameters variations in InGaAs dual-gate ultra-thin body MOSFETs: A scaling perspective.

Nicolo Zagni, Francesco Maria Puglisi, Giovanni Verzellesi, Paolo Pavan

Proceedings of the 27th International Symposium on Power and Timing Modeling, 2017

2015

Modeling challenges for high-efficiency visible light-emitting diodes.

Francesco Bertazzi, Stefano Dominici, Marco Mandurrino, Dipika Robidas, Xiangyu Zhou, Marco Vallone, Marco Calciati, Pierluigi Debernardi, Giovanni Verzellesi, Matteo Meneghini, Enrico Bellotti, Giovanni Ghione, Michele Goano

Proceedings of the 1st IEEE International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow, 2015

A Wireless Personal Sensor Node for Real Time Dosimetry of Interventional Radiology Operators.

Daniel Magalotti, Pisana Placidi, Stefania Fabiani, Lucia Bissi, Massimiliano Paolucci, Andrea Scorzoni, Andrea Calandra, Giovanni Verzellesi, Leonello Servoli

Proceedings of the Applications in Electronics Pervading Industry, Environment and Society, 2015

2014

ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements.

Matteo Meneghini, Simone Vaccari, Matteo Dal Lago, Stefano Marconi, Marco Barbato, Nicola Trivellin, Alessio Griffoni, Alberto Alfier, Giovanni Verzellesi, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2014

Breakdown investigation in GaN-based MIS-HEMT devices.

Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso

Proceedings of the 44th European Solid State Device Research Conference, 2014

2010

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations.

Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini

Microelectron. Reliab., 2010

2007

Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs.

Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua

Microelectron. Reliab., 2007

2005

DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues.

Giovanni Verzellesi, Gaudenzio Meneghesso, Alessandro Chini, Enrico Zanoni, Claudio Canali

Microelectron. Reliab., 2005

2001

Gate-lag effects in AlGaAs/GaAs power HFET's.

Mattia Borgarino, Giovanna Sozzi, Andrea Mazzanti, Giovanni Verzellesi

Microelectron. Reliab., 2001