Muhammad Ashraful Alam
Orcid: 0000-0001-8775-6043Affiliations:
- Purdue University, West Lafayette, IN, USA
According to our database1,
Muhammad Ashraful Alam
authored at least 41 papers
between 2001 and 2023.
Collaborative distances:
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Bibliography
2023
Reliability of HfO<sub>2</sub>-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges.
Proc. IEEE, February, 2023
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone Quantified.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Transient Leakage Current as a Non-destructive Probe of Wire-bond Electrochemical Failures.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Training a Quantum Annealing Based Restricted Boltzmann Machine on Cybersecurity Data.
IEEE Trans. Emerg. Top. Comput. Intell., 2022
Steady-State and Transient Performance of Ion-Sensitive Electrodes Suitable for Wearable and Implantable Electro-Chemical Sensing.
IEEE Trans. Biomed. Eng., 2022
Techno Economic Modeling for Agrivoltaics: Can Agrivoltaics be more profitable than Ground mounted PV?
CoRR, 2022
IEEE Access, 2022
Reduced Relative Humidity (RH) Enhances the Corrosion-Limited Lifetime of Self-Heated IC: Peck's equation Generalized.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Principles of Solar Cells - Connecting Perspectives on Device, System, Reliability, and Data Science
WorldScientific, ISBN: 9789811231551, 2022
2021
Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Generalized Modeling Framework of Metal Oxide-Based Non-Enzymatic Glucose Sensors: Concepts, Methods, and Challenges.
IEEE Trans. Biomed. Eng., 2020
Training a quantum annealing based restricted Boltzmann machine on cybersecurity data.
CoRR, 2020
Training and Classification using a Restricted Boltzmann Machine on the D-Wave 2000Q.
CoRR, 2020
CoRR, 2020
A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
An Analytical Transient Joule Heating Model for an Interconnect in a Modern IC: Material Selection (Cu, Co, Ru) and Cooling Strategies.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
2018
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits.
Microelectron. Reliab., 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Physics-based compact models for insulated-gate field-effect biosensors, landau-transistors, and thin-film solar cells.
Proceedings of the 2015 IEEE Custom Integrated Circuits Conference, 2015
2014
OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review.
Microelectron. Reliab., 2014
2011
2008
Microelectron. Reliab., 2008
2007
Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2007
Impact of Negative-Bias Temperature Instability in Nanoscale SRAM Array: Modeling and Analysis.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2007
Microelectron. Reliab., 2007
Characterization of NBTI induced temporal performance degradation in nano-scale SRAM array using IDDQ.
Proceedings of the 2007 IEEE International Test Conference, 2007
Estimation of statistical variation in temporal NBTI degradation and its impact on lifetime circuit performance.
Proceedings of the 2007 International Conference on Computer-Aided Design, 2007
Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line IDDQ Measurement.
Proceedings of the 44th Design Automation Conference, 2007
2006
Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI.
Proceedings of the 24th International Conference on Computer Design (ICCD 2006), 2006
Temporal performance degradation under NBTI: estimation and design for improved reliability of nanoscale circuits.
Proceedings of the Conference on Design, Automation and Test in Europe, 2006
2005
Microelectron. Reliab., 2005
2004
Proceedings of the International Conference on Information Technology: Coding and Computing (ITCC'04), 2004
2001
Proceedings of the IEEE 2001 Custom Integrated Circuits Conference, 2001