Muhammad Ashraful Alam

Affiliations:
  • Purdue University, West Lafayette, IN, USA


According to our database1, Muhammad Ashraful Alam authored at least 24 papers between 2004 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2022
Steady-State and Transient Performance of Ion-Sensitive Electrodes Suitable for Wearable and Implantable Electro-Chemical Sensing.
IEEE Trans. Biomed. Eng., 2022

A Critical Analysis of Bifacial Solar Farm Configurations: Theory and Experiments.
IEEE Access, 2022

Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Generalized Modeling Framework of Metal Oxide-Based Non-Enzymatic Glucose Sensors: Concepts, Methods, and Challenges.
IEEE Trans. Biomed. Eng., 2020

Resilient Cyberphysical Systems and their Application Drivers: A Technology Roadmap.
CoRR, 2020

A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
An Analytical Transient Joule Heating Model for an Interconnect in a Modern IC: Material Selection (Cu, Co, Ru) and Cooling Strategies.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015
Characterization and reliability of III-V gate-all-around MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review.
Microelectron. Reliab., 2014

2011
Computing Nice Projections of Convex Polyhedra.
Int. J. Comput. Geom. Appl., 2011

2008
Reliability- and process-variation aware design of integrated circuits.
Microelectron. Reliab., 2008

2007
Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2007

Impact of Negative-Bias Temperature Instability in Nanoscale SRAM Array: Modeling and Analysis.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2007

A comprehensive model for PMOS NBTI degradation: Recent progress.
Microelectron. Reliab., 2007

Characterization of NBTI induced temporal performance degradation in nano-scale SRAM array using IDDQ.
Proceedings of the 2007 IEEE International Test Conference, 2007

Estimation of statistical variation in temporal NBTI degradation and its impact on lifetime circuit performance.
Proceedings of the 2007 International Conference on Computer-Aided Design, 2007

Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line IDDQ Measurement.
Proceedings of the 44th Design Automation Conference, 2007

2006
Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI.
Proceedings of the 24th International Conference on Computer Design (ICCD 2006), 2006

Temporal performance degradation under NBTI: estimation and design for improved reliability of nanoscale circuits.
Proceedings of the Conference on Design, Automation and Test in Europe, 2006

2005
A comprehensive model of PMOS NBTI degradation.
Microelectron. Reliab., 2005

2004
Software Security in Bangladesh with .NET Framework: A Roadmap.
Proceedings of the International Conference on Information Technology: Coding and Computing (ITCC'04), 2004


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