Guangxi Hu
Affiliations:- Fudan University, Shanghai, China
According to our database1,
Guangxi Hu
authored at least 12 papers
between 2011 and 2023.
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Bibliography
2023
Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors.
Sci. China Inf. Sci., February, 2023
2022
Proceedings of the 4th IEEE International Conference on Artificial Intelligence Circuits and Systems, 2022
2019
A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance.
Proceedings of the 13th IEEE International Conference on ASIC, 2019
2017
Proceedings of the 12th IEEE International Conference on ASIC, 2017
2016
Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs.
Microelectron. J., 2016
2015
Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs.
Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015
2013
Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFET.
Proceedings of the IEEE 10th International Conference on ASIC, 2013
2012
Microelectron. J., 2012
2011
Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs.
Microelectron. J., 2011
An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs.
Microelectron. J., 2011
Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs.
Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011
Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study.
Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011