Ran Liu

Affiliations:
  • Fudan University, State Key Laboratory of ASIC and System, Department of Microelectronics, Shanghai, China


According to our database1, Ran Liu authored at least 20 papers between 2009 and 2021.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2021
An IoT-Based Life Cycle Assessment Platform of Wind Turbines.
Sensors, 2021

2019
A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance.
Proceedings of the 13th IEEE International Conference on ASIC, 2019

2017
A Mobile-Based High Sensitivity On-Field Organophosphorus Compounds Detecting System for IoT-Based Food Safety Tracking.
J. Sensors, 2017

Layer thinning of MoS2 flakes by thermal annealing in air.
Proceedings of the 12th IEEE International Conference on ASIC, 2017

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices.
Proceedings of the 12th IEEE International Conference on ASIC, 2017

2016
Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs.
Microelectron. J., 2016

2015
Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs.
Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015

2013
Chipless RFID tags fabricated by fully printing of metallic inks.
Ann. des Télécommunications, 2013

High-sensitivity photodetection sensor front-end, detecting organophosphourous compounds for food safety.
Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013

Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFET.
Proceedings of the IEEE 10th International Conference on ASIC, 2013

2012
Generic Mixed-Radix FFT Pruning.
IEEE Signal Process. Lett., 2012

Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs.
Microelectron. J., 2012

2011
Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs.
Microelectron. J., 2011

An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs.
Microelectron. J., 2011

A low-dropout voltage regulator with active current amplifier frequency compensation.
Int. J. Circuit Theory Appl., 2011

Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs.
Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011

Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study.
Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011

2009
A wide band differentially switch-tuned CMOS monolithic quadrature VCO with a low Kvco and high linearity.
Microelectron. J., 2009

EWOD using P(VDF-TrFE).
Proceedings of the 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2009

Trilayer nanoimprint fabrication and simulation of the silicon nanowire sensor for gas detection.
Proceedings of the 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2009


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