Gwan Park

According to our database, Gwan Park authored at least 2 papers between 2021 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput.

Wanik Cho, Chanhui Jeong, Jongwoo Kim, Jongseok Jung, Keunseon Ahn, Jayoon Goo, Sangkyu Lee, Kayoung Cho, Tei Cho, Dauni Kim, Gwan Park, Yushin Ahn, Sooyeol Chai, Gwihan Ko, Sunyoung Jung, Eunwoo Jo, Taehun Park, Jinhyun Ban, Cheoljoong Park, Jae Hyun Park, Sanghoon Oh, Sojin Jeong, Youngjun Kwak, Kyungsoo Jeong, Jinyeop Kim, Minchol Shin, Eunho Yang, Taisik Shin, Youngil Kim, Jiseong Mun, Chanyang Ryu, Huihyeon Park, Changwan Ha, Jong Tai Park, Peng Zhang, Sooyong Park, Rezaul Haque, Hang Tian, Sunghwa Ok, Wonbeom Choi, Junyoun Lim, Dongkyu Yoon, Sechun Park, Wonsun Park, Kichang Gwon, Seungpil Lee, Hwang Huh, Woopyo Jeong, Jungdal Choi

Proceedings of the IEEE International Solid-State Circuits Conference, 2025

2021

A 176-Stacked 512Gb 3b/Cell 3D-NAND Flash with 10.8Gb/mm² Density with a Peripheral Circuit Under Cell Array Architecture.

Jae-Woo Park, Doogon Kim, Sunghwa Ok, Jaebeom Park, Taeheui Kwon, Hyunsoo Lee, Sungmook Lim, Sunyoung Jung, Hyeong-Jin Choi, Taikyu Kang, Gwan Park, Chul-Woo Yang, Jeong-Gil Choi, Gwihan Ko, Jae-Hyeon Shin, Ingon Yang, Junghoon Nam, Hyeokchan Sohn, Seok-in Hong, Yohan Jeong, Sung-Wook Choi, Changwoon Choi, Hyun-Soo Shin, Junyoun Lim, Dongkyu Youn, Sanghyuk Nam, Juyeab Lee, Myungkyu Ahn, Hoseok Lee, Seungpil Lee, Jongmin Park, Kichang Gwon, Woopyo Jeong, Jungdal Choi, Jinkook Kim, Kyowon Jin

Proceedings of the IEEE International Solid-State Circuits Conference, 2021