H. H. Kim

According to our database, H. H. Kim authored at least 2 papers in 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling.

J.-H. Yoo, H.-B. Jo, I.-G. Lee, S.-M. Choi, J.-M. Baek, S. T. Lee, H. Jang, M. W. Kong, H. H. Kim, H. J. Lee, H.-J. Kim, H.-S. Jeong, W.-S. Park, D.-H. Ko, S. H. Shin, H.-M. Kwon, S. K. Kim, J. G. Kim, J. Yun, T. Kim, K.-Y. Shin, T.-W. Kim, J.-K. Shin, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM.

Hideo Sato, H. M. Shin, H. Jung, S. W. Lee, H. Bae, H. Kwon, K. H. Ryu, W. C. Lim, Y. S. Han, J. H. Jeong, J. M. Lee, D. S. Kim, K. Lee, J. H. Lee, J. H. Park, Y. J. Song, Y. Ji, B. I. Seo, J. W. Kim, H. H. Kim

Proceedings of the IEEE International Reliability Physics Symposium, 2023