Hangning Shi

According to our database, Hangning Shi authored at least 2 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of three.

2023

Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology.

Hangning Shi, Ailun Yi, Jiaxin Ding, Xudong Liu, Qingcheng Qin, Juemin Yi, Junjie Hu, Miao Wang, Demin Cai, Jianfeng Wang, Ke Xu, Fengwen Mu, Tadatomo Suga, René Heller, Mao Wang, Shengqiang Zhou, Wenhui Xu, Kai Huang, Tiangui You, Xin Ou

Sci. China Inf. Sci., November, 2023

2022

Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces.

Tingting Jin, Jiajie Lin, Tiangui You, Xiaolei Zhang, Hao Liang, Yifan Zhu, Jialiang Sun, Hangning Shi, Chaodan Chi, Min Zhou, Robert Kudrawiec, Shumin Wang, Xin Ou

Sci. China Inf. Sci., 2022