Herbert Knapp

According to our database1, Herbert Knapp authored at least 20 papers between 1994 and 2019.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2019
A Low Phase Noise, Wide Tuning Range 20GHz Magnetic-Coupled Hartley-VCO in a 28nm CMOS Technology.
Proceedings of the IEEE Radio and Wireless Symposium, 2019

A 16-dBm D-Band Power Amplifier with a Cascaded CE and CB Output Power Stage Using a Stub Matching Topology.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

A 19.5 dBm Power Amplifier with Highly Accurate 8-bit Power Controlling for Automotive Radar Applications in a 28 nm CMOS Technology.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2014
SiGe BiCMOS technology and circuits for active safety systems.
Proceedings of the Technical Papers of 2014 International Symposium on VLSI Design, 2014

2012
Low Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe Bipolar Technology.
IEEE J. Solid State Circuits, 2012

2011
A 122-GHz SiGe-Based Signal-Generation Chip Employing a Fundamental-Wave Oscillator With Capacitive Feedback Frequency-Enhancement.
IEEE J. Solid State Circuits, 2011

2009
Dielectric thinning model applied to metal insulator metal capacitors with Al<sub>2</sub>O<sub>3</sub> dielectric.
Microelectron. Reliab., 2009

Merged power amplifier and mixer circuit topology for radar applications in CMOS.
Proceedings of the 35th European Solid-State Circuits Conference, 2009

Low-noise ESD-protected 24 GHz receiver for radar applications in SiGe: C technology.
Proceedings of the 35th European Solid-State Circuits Conference, 2009

2007
An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology.
IEEE J. Solid State Circuits, 2007

A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar.
Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology.
Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2005
100-Gb/s 2<sup>7</sup>-1 and 54-Gb/s 2<sup>11</sup>-1 PRBS generators in SiGe bipolar technology.
IEEE J. Solid State Circuits, 2005

2004
Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology.
IEEE J. Solid State Circuits, 2004

2003
40-Gb/s 2: 1 multiplexer and 1: 2 demultiplexer in 120-nm standard CMOS.
IEEE J. Solid State Circuits, 2003

2002
38 GHz low-power static frequency divider in SiGe bipolar technology.
Proceedings of the 2002 International Symposium on Circuits and Systems, 2002

2001
2-GHz/2-mW and 12-GHz/30-mW dual-modulus prescalers in silicon bipolar technology.
IEEE J. Solid State Circuits, 2001

1999
A 40-Gb/s integrated clock and data recovery circuit in a 50-GHz f<sub>T</sub> silicon bipolar technology.
IEEE J. Solid State Circuits, 1999

1998
A 3.8-mW 2.5-GHz dual-modulus prescaler in a 0.8 µm silicon bipolar production technology.
Proceedings of the 1998 International Symposium on Low Power Electronics and Design, 1998

1994
Personal communications transceiver architectures for monolithic integration.
Proceedings of the 5th IEEE International Symposium on Personal, 1994


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