Hichame Maanane

According to our database, Hichame Maanane authored at least 13 papers between 2004 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2019

Implementation and Experimental Validation of Robust Numerical Control for DC-DC Buck Converter.

Abdivall Maouloud, Moussa Boukhnifer, Chérif Larouci, Hichame Maanane, Fabien Simon

Proceedings of the 6th International Conference on Control, 2019

2014

A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications).

Pascal Dherbécourt, Olivier Latry, Eric Joubert, Karine Dehais-Mourgues, Hichame Maanane, Jean Pierre Sipma, Philippe Eudeline

Proceedings of the 4th International Conference on Multimedia Computing and Systems, 2014

2012

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life.

Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani

Microelectron. Reliab., 2012

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.

Jean-Baptiste Fonder, Laetitia Chevalier, Cédric Genevois, Olivier Latry, Cedric Duperrier, Farid Temcamani, Hichame Maanane

Microelectron. Reliab., 2012

2011

Characterization and modeling of hot carrier injection in LDMOS for L-band radar application.

Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline

Microelectron. Reliab., 2011

2010

A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications.

Olivier Latry, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi

Microelectron. Reliab., 2010

2007

Study of hot-carrier effects on power RF LDMOS device reliability.

M. Gares, Mohamed Ali Belaïd, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline

Microelectron. Reliab., 2007

2006

Study of RF N^- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF.

Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline

Microelectron. Reliab., 2006

Hot carrier reliability of RF N- LDMOS for S Band radar application.

M. Gares, Hichame Maanane, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, Philippe Eudeline

Microelectron. Reliab., 2006

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests.

Mohamed Ali Belaïd, K. Ketata, Mohamed Masmoudi, M. Gares, Hichame Maanane, Jérôme Marcon

Microelectron. Reliab., 2006

Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance.

M. Gares, Hichame Maanane, Mohamed Ali Belaïd, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Pierre Bertram, Philippe Eudeline

Proceedings of the Canadian Conference on Electrical and Computer Engineering, 2006

2005

Comparative analysis of accelerated ageing effects on power RF LDMOS reliability.

Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon

Microelectron. Reliab., 2005

2004

Reliability study of Power RF LDMOS for Radar Application.

Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata

Microelectron. Reliab., 2004