In-Jae Bae

According to our database, In-Jae Bae authored at least 2 papers between 2024 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Improvement of IGZO BTI for DRAM Cell application by heat treatment and recovery effect.

Changsik Kim, Jongmoo Lee, Jihee Jun, Chanhee Han, In-Jae Bae, Youngkwan Park, Hana Cho, Hyeontae Kim, Dongsik Park, Heonjun Ha, Jaejoon Song, Changsik Yoo, Sangjoon Hwang

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

A Single-Ended Offset-Compensating Bit-Line Sense-Amplifier with Ground Precharge and Charge Transfer Pre sensing for Sub-1V DRAM.

Changyoung Lee, Youngseok Park, Hyunchul Yoon, Seryeong Yoon, Donggeon Kim, Bokyeon Won, Junhwa Song, In-Jae Bae, Jaejoon Song, Kyuchang Kang, Jaehyuk Kim, Kyungrak Cho, Incheol Nam, Jungdon Ihm, Young-Hun Seo, Changsik Yoo, Sang Jun Hwang

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2024