Insaf Lahbib

According to our database, Insaf Lahbib authored at least 2 papers between 2017 and 2019.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2019

Comparison of modeling approaches for transistor degradation: model card adaptations vs subcircuits.

André Lange, Fabio A. Velarde Gonzalez, Insaf Lahbib, Sonja Crocoll

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2017

Simulation and analysis of DC and RF performances degradation of NMOS transistors under hot carrier injection mechanism.

Insaf Lahbib, Aziz Doukkali, Patrick Martin, Philippe Descamps, Guy Imbert

Proceedings of the IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, Beijing, China, October 29, 2017