Ivan Garduño

According to our database, Ivan Garduño authored at least 2 papers between 2016 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Characterization of MIS structures and thin film transistors using RF-sputtered HfO₂/HIZO layers.

Isaí Hernández, César Adrián Pons-Flores, Ivan Garduño, Julio C. Tinoco, Israel Mejia, Magali Estrada

Microelectron. Reliab., 2017

2016

Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors.

Magali Estrada, M. Rivas, Ivan Garduño, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello, Israel Mejia, M. A. Quevedo-Lopez

Microelectron. Reliab., 2016