Antonio Cerdeira

According to our database1, Antonio Cerdeira authored at least 30 papers between 2001 and 2016.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2016
Drain current model for short-channel triple gate junctionless nanowire transistors.
Microelectron. Reliab., 2016

Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors.
Microelectron. Reliab., 2016

On the series resistance in staggered amorphous thin film transistors.
Microelectron. Reliab., 2016

Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors.
Proceedings of the 13th International Conference on Electrical Engineering, 2016

2015
DC self-heating effects modelling in SOI and bulk FinFETs.
Microelectron. J., 2015

2014
Characterization of MIS structures and PTFTs using TiOx deposited by spin-coating.
Microelectron. Reliab., 2014

Harmonic distortion analysis implementation for the determination of distortion in analog circuits.
Proceedings of the 11th International Conference on Electrical Engineering, 2014

2013
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models.
Microelectron. J., 2013

2012
Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors.
Microelectron. Reliab., 2012

Modeling the behavior of amorphous oxide thin film transistors before and after bias stress.
Microelectron. Reliab., 2012

Optimised design of an organic thin-film transistor amplifier using the gm/ID methodology.
IET Circuits Devices Syst., 2012

Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime.
IET Circuits Devices Syst., 2012

2011
Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation.
Microelectron. Reliab., 2011

Gate leakage currents modeling for oxynitride gate dielectric in double gate MOSFETs.
Proceedings of the 8th International Conference on Electrical Engineering, 2011

Modeling the subthreshold region of OTFTs.
Proceedings of the 8th International Conference on Electrical Engineering, 2011

2010
3D structure simulation and proceeding to extract mobility parameters for FinFETs varying channel length.
Proceedings of the 7th International Conference on Electrical Engineering, 2010

2009

Modeling wine preferences by data mining from physicochemical properties.
Decis. Support Syst., 2009

Using Data Mining for Wine Quality Assessment.
Proceedings of the Discovery Science, 12th International Conference, 2009

2008
Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures.
Microelectron. Reliab., 2008

Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation.
Microelectron. J., 2008

2007
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs.
Microelectron. J., 2007

2005
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs.
Microelectron. Reliab., 2005

2003
Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers.
Microelectron. Reliab., 2003

FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si: H photodiode.
Microelectron. Reliab., 2003

2002
Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors.
Microelectron. Reliab., 2002

A review of recent MOSFET threshold voltage extraction methods.
Microelectron. Reliab., 2002

Precise SPICE macromodel applied to high-voltage power MOSFET.
Microelectron. Reliab., 2002

Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs.
Microelectron. Reliab., 2002

2001
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction.
Microelectron. Reliab., 2001


  Loading...