Jaroslav Kovác

According to our database, Jaroslav Kovác authored at least 10 papers between 2006 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2020

Optimization of SiON/SiOx structures fabrication process for optical waveguides.

L'ubos Podlucký, Marián Vojs, Jozef Chovan, Vlastimil Rehácek, Jaroslav Kovác, Frantisek Uherek

Proceedings of the 30th International Conference Radioelektronika, 2020

2012

Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure.

Nicola Wrachien, Daniel Bari, Jaroslav Kovác, Jan Jakabovic, Daniel Donoval, Gaudenzio Meneghesso, Andrea Cester

Microelectron. Reliab., 2012

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors.

Jaroslav Kovác, Alexander Satka, Ales Chvála, D. Donoval, Peter Kordos, Sylvain L. Delage

Microelectron. Reliab., 2012

2009

Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor.

Jaroslav Kovác, Jaroslava Skriniarová, Martin Florovic, J. Jakabovic, Jozef Chovan, R. Srnánek, A. Vincze, B. Sciana, D. Radziewicz, Iwona Zborowska-Lindert, M. Tlaczala

Microelectron. J., 2009

Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors.

J. Jakabovic, Jaroslav Kovác, Martin Weis, Daniel Hasko, R. Srnánek, Peter Valent, Roland Resel

Microelectron. J., 2009

2008

High-temperature performance of AlGaN/GaN HFETs and MOSHFETs.

D. Donoval, Martin Florovic, Dagmar Gregusová, Jaroslav Kovác, Peter Kordos

Microelectron. Reliab., 2008

2007

Periodic structures prepared by two-beam interference method.

Jaroslava Skriniarová, Dusan Pudis, Ivan Martincek, Jaroslav Kovác, Norbert Tarjányi, Marián Veselý, I. Turek

Microelectron. J., 2007

2006

Characterisation of titanium disilicide thin films.

Alexander Satka, J. Liday, R. Srnánek, A. Vincze, Daniel Donoval, Jaroslav Kovác, Marián Veselý, Miroslav Michalka

Microelectron. J., 2006

Investigation of graded In_xGa_1-xP buffer by Raman scattering method.

Loránt Peternai, Jaroslav Kovác, Gert Irmer, Stanislav Hasenöhrl, Jozef Novák, Rudolf Srnánek

Microelectron. J., 2006

Avalanche photodiode with sectional InGaAsP/InP charge layer.

Daniel Hasko, Jaroslav Kovác, F. Uherek, Jaroslava Skriniarová, J. Jakabovic, L. Peternai

Microelectron. J., 2006