M. Tlaczala

According to our database, M. Tlaczala authored at least 5 papers between 2005 and 2009.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2009

Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures.

R. Kudrawiec, M. Motyka, J. Misiewicz, B. Paszkiewicz, R. Paszkiewicz, M. Tlaczala

Microelectron. J., 2009

Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor.

Jaroslav Kovác, Jaroslava Skriniarová, Martin Florovic, J. Jakabovic, Jozef Chovan, R. Srnánek, A. Vincze, B. Sciana, D. Radziewicz, Iwona Zborowska-Lindert, M. Tlaczala

Microelectron. J., 2009

2008

Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy.

R. Srnánek, G. Irmer, D. Donoval, A. Vincze, B. Sciana, D. Radziewicz, M. Tlaczala

Microelectron. J., 2008

Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn delta-doped GaAs structures.

R. Srnánek, G. Irmer, D. Donoval, J. Osvald, D. Mc Phail, A. Christoffi, B. Sciana, D. Radziewicz, M. Tlaczala

Microelectron. J., 2008

2005

Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy.

J. Misiewicz, R. Kudrawiec, Marcin Syperek, R. Paszkiewicz, B. Paszkiewicz, M. Tlaczala

Microelectron. J., 2005