Jiangwei Cui

According to our database, Jiangwei Cui authored at least 3 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation.

Xiaolong Li, Xin Wang, Mohan Liu, Kunfeng Zhu, Guohua Shui, Qiwen Zheng, Jiangwei Cui, Wu Lu, Yudong Li, Qi Guo

IEEE Access, 2024

2020

Modeling of TID-induced leakage current in ultra-deep submicron SOI NMOSFETs.

Shanxue Xi, Qiwen Zheng, Wu Lu, Jiangwei Cui, Ying Wei, Qi Guo

Microelectron. J., 2020

2018

Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices.

Teng Ma, Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou, Dandan Su, Qi Guo

Microelectron. Reliab., 2018