Kuo-Yu Hsiang

According to our database, Kuo-Yu Hsiang authored at least 6 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs.

J.-Y. Lee, F.-S. Chang, Kuo-Yu Hsiang, P.-H. Chen, Z.-F. Luo, Z.-X. Li, J.-H. Tsai, Chee Wee Liu, Min-Hung Lee

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations.

Kuo-Yu Hsiang, J.-Y. Lee, F.-S. Chang, Z.-F. Lou, Z.-X. Li, Z.-H. Li, J.-H. Chen, Chee Wee Liu, T.-H. Hou, Min-Hung Lee

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf_1-xZr_XO₂ for Quantum Computing Applications.

Kuo-Yu Hsiang, Jia-Yang Lee, Z.-F. Lou, F.-S. Chang, Z.-X. Li, C. W. Liu, T.-H. Hou, P. Su, Min-Hung Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM.

C.-Y. Liao, Kuo-Yu Hsiang, Z.-F. Lou, H.-C. Tseng, C.-Y. Lin, Z.-X. Li, F.-C. Hsieh, C. C. Wang, F.-S. Chang, W.-C. Ray, Y.-Y. Tseng, Shu-Tong Chang, T. C. Chen, Min-Hung Lee

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array.

H.-L. Chiang, J.-F. Wang, K.-H. Lin, C.-H. Nien, J.-J. Wu, Kuo-Yu Hsiang, C.-P. Chuu, Yun-Wen Chen, X. W. Zhang, Chee Wee Liu, Tahui Wang, C. C. Wang, Min-Hung Lee, M.-F. Chang, C.-S. Chang, T. C. Chen

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Correlation between Access Polarization and High Endurance (~ 10¹² cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2.

Kuo-Yu Hsiang, C.-Y. Liao, Y.-Y. Lin, Z.-F. Lou, C.-Y. Lin, J.-Y. Lee, F.-S. Chang, Z.-X. Li, H.-C. Tseng, C.-C. Wang, W.-C. Ray, T.-H. Hou, T.-C. Chen, C.-S. Chang, Min-Hung Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2022