Chee Wee Liu
Orcid: 0000-0002-6439-8754
According to our database1,
Chee Wee Liu authored at least 16 papers
between 2010 and 2024.
Collaborative distances:
Collaborative distances:
Awards
IEEE Fellow
IEEE Fellow 2018, "For contributions to high-mobility germanium and silicon-germanium MOSFETs".
Timeline
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Book In proceedings Article PhD thesis Dataset OtherLinks
Online presence:
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on orcid.org
On csauthors.net:
Bibliography
2024
Engineering Ferroelectric HZO With n<sup>+</sup>-Si/Ge Substrates Achieving High 2P<sub>r</sub>=84 μC/cm<sup>2</sup> and Endurance >1E11.
IEEE Access, 2024
IEEE Access, 2024
Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform c-Axis Alignment, Record High Breakdown Field (~10nm HZO), and Record Final 2Pr of 56 μC/cm<sup>2</sup> with Endurance > 4E12.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
2023
Towards Epitaxial Ferroelectric HZO on n<sup>+</sup>-Si/Ge Substrates Achieving Record 2Pr = 84 μC/cm² and Endurance > 1E11.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec, Ioff<10<sup>-7</sup> μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
2022
Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
2018
Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Utilizing Voltage-Controlled Magnetic Anisotropy Pulse Width Optimization.
Proceedings of the Non-Volatile Memory Technology Symposium, 2018
BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdown.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2015
Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015
2012
Proceedings of the 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2012
2010