Lunchun Guo

According to our database, Lunchun Guo authored at least 3 papers in 2008.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2008

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD.

Weijun Luo, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Junxue Ran, Lunchun Guo, Jianping Li, Hongxin Liu, Yanling Chen, Fuhua Yang, Jinmin Li

Microelectron. J., 2008

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD.

Weijun Luo, Xiaoliang Wang, Lunchun Guo, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li, Jinmin Li

Microelectron. J., 2008

The influence of 1 nm AlN interlayer on properties of the Al_0.3Ga_0.7N/AlN/GaN HEMT structure.

Lunchun Guo, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, Guoxin Hu

Microelectron. J., 2008