Cuimei Wang

According to our database1, Cuimei Wang authored at least 13 papers between 2005 and 2025.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book  In proceedings  Article  PhD thesis  Dataset  Other 

Links

On csauthors.net:

Bibliography

2025
Polynomial geometric transformation based on IGZO charge trapping RAM array for machine vision calibration.
Sci. China Inf. Sci., 2025

2024
Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network.
Sci. China Inf. Sci., 2024

Amorphous InAIZnO-based 2T0C Unit for Peak Signal Detection.
Proceedings of the IEEE International Conference on Integrated Circuits, 2024

Ultrafast Pulse Signal Detection Based on a Dual-transistor Structure.
Proceedings of the IEEE International Conference on Integrated Circuits, 2024

2023
Design Considerations of Multi-Level 1S1R Cell for In-Memory Computing.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023

A High-Throughput and Configurable TRNG Based on Dual-Mode Memristor for Stochastic Computing.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023

Device-Architecture Co-optimization for RRAM-based In-memory Computing.
Proceedings of the 15th IEEE International Conference on ASIC, 2023

2008
Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD.
Microelectron. J., 2008

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD.
Microelectron. J., 2008

The influence of 1 nm AlN interlayer on properties of the Al<sub>0.3</sub>Ga<sub>0.7</sub>N/AlN/GaN HEMT structure.
Microelectron. J., 2008

2007
Characteristics of high Al content Al<sub>x</sub>Ga<sub>1-x</sub>N grown by metalorganic chemical vapor deposition.
Microelectron. J., 2007

2006
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD.
Microelectron. J., 2006

2005
Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates.
Sci. China Ser. F Inf. Sci., 2005


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