Cuimei Wang

According to our database1, Cuimei Wang authored at least 9 papers between 2005 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Design Considerations of Multi-Level 1S1R Cell for In-Memory Computing.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023

A High-Throughput and Configurable TRNG Based on Dual-Mode Memristor for Stochastic Computing.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023

Device-Architecture Co-optimization for RRAM-based In-memory Computing.
Proceedings of the 15th IEEE International Conference on ASIC, 2023

2008
Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD.
Microelectron. J., 2008

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD.
Microelectron. J., 2008

The influence of 1 nm AlN interlayer on properties of the Al<sub>0.3</sub>Ga<sub>0.7</sub>N/AlN/GaN HEMT structure.
Microelectron. J., 2008

2007
Characteristics of high Al content Al<sub>x</sub>Ga<sub>1-x</sub>N grown by metalorganic chemical vapor deposition.
Microelectron. J., 2007

2006
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD.
Microelectron. J., 2006

2005
Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates.
Sci. China Ser. F Inf. Sci., 2005


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