Mahmood Uddin Mohammed

Orcid: 0000-0003-1537-1173

According to our database1, Mahmood Uddin Mohammed authored at least 6 papers between 2018 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2021
FinFET based SRAMs in Sub-10nm domain.
Microelectron. J., 2021

2019
A Low Leakage SRAM Bitcell Design Based on MOS-Type Graphene Nano-Ribbon FET.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2019

Design of Energy Efficient SRAM Cell Based on Double Gate Schottky-Barrier-Type GNRFET with Minimum Dimer Lines.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2019

2018
Reliability and Energy Efficiency of the Tunneling Transistor-Based 6T SRAM Cell in Sub-10 nm Domain.
IEEE Trans. Circuits Syst. II Express Briefs, 2018

Novel CNTFET and Memristor based Unbalanced Ternary Logic Gate.
Proceedings of the IEEE 61st International Midwest Symposium on Circuits and Systems, 2018

A Disturb Free Read Port 8T SRAM Bitcell Circuit Design with Virtual Ground Scheme.
Proceedings of the IEEE 61st International Midwest Symposium on Circuits and Systems, 2018


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