Manuel Fregolent

According to our database, Manuel Fregolent authored at least 4 papers between 2023 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2025

Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications.

Francesco de Pieri, Manuel Fregolent, Marco Saro, Andrea Carlotto, Mirco Boito, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate.

Riccardo Fraccaroli, Matteo Dell'Andrea, Manuel Fregolent, Mirco Boito, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eleonora Canato, Isabella Rossetto, Alessio Pirani, Giansalvo Pizzo, Cristina Miccoli, Alfio Russo, Maria Eloisa Castagna, Ferdinando Iucolano, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.

Mirco Boito, Manuel Fregolent, Carlo De Santi, A. Abbisogni, S. Smerzi, Isabella Rossetto, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques.

Manuel Fregolent, Alberto Marcuzzi, Carlo De Santi, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2023