Fabiana Rampazzo

According to our database, Fabiana Rampazzo authored at least 17 papers between 2004 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests.

Zhan Gao, Francesca Chiocchetta, Fabiana Rampazzo, Carlo De Santi, Mirko Fornasier, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.

Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz

Proceedings of the IEEE International Reliability Physics Symposium, 2022

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.

Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.

Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling.

Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Fabiana Rampazzo, Daniele Marcon, Veronica Gao Zhan, Francesca Chiocchetta, Andreas Graff, Frank Altmann, Michél Simon-Najasek, David Poppitz

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2015

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.

Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2015

2014

Proton induced trapping effect on space compatible GaN HEMTs.

Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni

Microelectron. Reliab., 2014

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.

Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni

Microelectron. Reliab., 2014

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.

Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2014

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.

Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage

Proceedings of the 44th European Solid State Device Research Conference, 2014

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.

Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.

Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2013

2012

Single- and double-heterostructure GaN-HEMTs devices for power switching applications.

Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso

Microelectron. Reliab., 2012

2007

Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs.

Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua

Microelectron. Reliab., 2007

2006

Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.

Francesca Danesin, Franco Zanon, Simone Gerardin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Alessandro Paccagnella

Microelectron. Reliab., 2006

Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate.

Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni

IEICE Electron. Express, 2006

2004

Hot carrier aging degradation phenomena in GaN based MESFETs.

Fabiana Rampazzo, Roberto Pierobon, D. Pacetta, Christophe Gaquière, Didier Théron, Bertrand Boudart, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2004