Marko Koricic

According to our database1, Marko Koricic authored at least 18 papers between 2002 and 2021.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of four.

Timeline

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Bibliography

2021
Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application.
Proceedings of the 44th International Convention on Information, 2021

Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020
Doherty Power Amplifier in Horizontal Current Bipolar Transistor (HCBT) Technology.
Proceedings of the 43rd International Convention on Information, 2020

Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar Transistor.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019
Balanced RF Power Amplifier Design in Horizontal Current Bipolar Transistor (HCBT) Technology.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019

Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018
Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018

Analysis of tunable BVCEO in horizontal current bipolar transistor with floating field plates.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018

Noise Figure Characterization of Horizontal Current Bipolar Transistor (HCBT).
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2017
Analysis of hot carrier-induced degradation of Horizontal Current Bipolar Transistor (HCBT).
Proceedings of the 40th International Convention on Information and Communication Technology, 2017

Impact of the local p-well substrate parameters on the electrical performance of the Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor.
Proceedings of the 40th International Convention on Information and Communication Technology, 2017

2016
Impact of the emitter polysilicon thickness on the performance of high-linearity mixers with horizontal current bipolar transistors.
Proceedings of the 39th International Convention on Information and Communication Technology, 2016

Fully-integrated voltage controlled oscillator in low-cost HCBT technology.
Proceedings of the 39th International Convention on Information and Communication Technology, 2016

2015
Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region.
Proceedings of the 38th International Convention on Information and Communication Technology, 2015

2012
Impact of bipolar transistor parameters on the characteristics of the double-balanced mixer.
Proceedings of the 2012 Proceedings of the 35th International Convention, 2012

2011
Structural and electronic properties of heavily phosphorus doped polycrystalline silicon thin films.
Proceedings of the MIPRO, 2011

Impact of the collector region fabrication on electrical characteristics of HCBT structures in 180 nm BiCMOS technology.
Proceedings of the MIPRO, 2011

2002
High-frequency analysis of SOI lateral bipolar transistor (LBT) structure for RF analog applications.
Proceedings of the 2002 9th IEEE International Conference on Electronics, 2002


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