Tomislav Suligoj
According to our database1,
Tomislav Suligoj
authored at least 45 papers
between 2002 and 2023.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
On csauthors.net:
Bibliography
2023
Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023
2022
Layout-Dependent Noise Performance of Single-Photon Avalanche Diodes in 180 nm High-Voltage CMOS Technology.
Proceedings of the 45th Jubilee International Convention on Information, 2022
Numerical Optimization of On-Resistance and Transconductance in Depletion-Mode and Enhancement-Mode GaN HEMTs.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022
2021
Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer.
Proceedings of the 44th International Convention on Information, 2021
Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application.
Proceedings of the 44th International Convention on Information, 2021
Modelling of Electrostatics and Transport in GaN-Based HEMTs under Non-Equilibrium Conditions.
Proceedings of the 44th International Convention on Information, 2021
Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021
Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021
2020
Proceedings of the 43rd International Convention on Information, 2020
Proceedings of the 43rd International Convention on Information, 2020
Proceedings of the 43rd International Convention on Information, 2020
Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar Transistor.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020
2019
Balanced RF Power Amplifier Design in Horizontal Current Bipolar Transistor (HCBT) Technology.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019
Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019
Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C.
Proceedings of the 49th European Solid-State Device Research Conference, 2019
Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019
2018
Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μM High-Voltage CMOS Technology.
Proceedings of the 28th International Symposium on Power and Timing Modeling, 2018
Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35bm CMOS technology.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018
Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018
Analysis of tunable BVCEO in horizontal current bipolar transistor with floating field plates.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018
Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018
2017
Analysis of hot carrier-induced degradation of Horizontal Current Bipolar Transistor (HCBT).
Proceedings of the 40th International Convention on Information and Communication Technology, 2017
Band-structure of ultra-thin InGaAs channels: Impact of biaxial strain and thickness scaling.
Proceedings of the 40th International Convention on Information and Communication Technology, 2017
Impact of the local p-well substrate parameters on the electrical performance of the Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor.
Proceedings of the 40th International Convention on Information and Communication Technology, 2017
Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions.
Proceedings of the 40th International Convention on Information and Communication Technology, 2017
2016
Impact of the emitter polysilicon thickness on the performance of high-linearity mixers with horizontal current bipolar transistors.
Proceedings of the 39th International Convention on Information and Communication Technology, 2016
Proceedings of the 39th International Convention on Information and Communication Technology, 2016
Analysis of electrical and optical characteristics of InP/InGaAs avalanche photodiodes in linear regime by a new simulation environment.
Proceedings of the 39th International Convention on Information and Communication Technology, 2016
Design of passive-quenching active-reset circuit with adjustable hold-off time for single-photon avalanche diodes.
Proceedings of the 39th International Convention on Information and Communication Technology, 2016
2015
Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices.
Proceedings of the 38th International Convention on Information and Communication Technology, 2015
Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region.
Proceedings of the 38th International Convention on Information and Communication Technology, 2015
Optimization of floating guard ring parameters in separate-absorption-and-multiplication silicon avalanche photodiode structure.
Proceedings of the 38th International Convention on Information and Communication Technology, 2015
2014
Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs.
Proceedings of the 37th International Convention on Information and Communication Technology, 2014
Proceedings of the 37th International Convention on Information and Communication Technology, 2014
Proceedings of the 37th International Convention on Information and Communication Technology, 2014
2012
On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials.
Proceedings of the 2012 Proceedings of the 35th International Convention, 2012
Impact of bipolar transistor parameters on the characteristics of the double-balanced mixer.
Proceedings of the 2012 Proceedings of the 35th International Convention, 2012
Modelling of electrical characteristics of ultrashallow pure amorphous boron p<sup>+</sup>n junctions.
Proceedings of the 2012 Proceedings of the 35th International Convention, 2012
Effects of disorder on transport properties of extremely scaled graphene nanoribbons.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2011
Structural and electronic properties of heavily phosphorus doped polycrystalline silicon thin films.
Proceedings of the MIPRO, 2011
Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs.
Proceedings of the MIPRO, 2011
Impact of the collector region fabrication on electrical characteristics of HCBT structures in 180 nm BiCMOS technology.
Proceedings of the MIPRO, 2011
Optimization of the perimeter doping of ultrashallow p<sup>+</sup>-n<sup>-</sup>-n<sup>+</sup> photodiodes.
Proceedings of the MIPRO, 2011
2002
High-frequency analysis of SOI lateral bipolar transistor (LBT) structure for RF analog applications.
Proceedings of the 2002 9th IEEE International Conference on Electronics, 2002