Michael Graef

According to our database, Michael Graef authored at least 11 papers between 2013 and 2017.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2017

Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs.

Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes

Proceedings of the 24th International Conference Mixed Design of Integrated Circuits and Systems, 2017

2016

Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs.

Fabian Hosenfeld, Michael Graef, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime

Proceedings of the 2016 MIXDES, 2016

Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs.

Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Alexander Kloes, Benjamín Iñíguez

Proceedings of the 2016 MIXDES, 2016

Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation.

Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs.

Atieh Farokhnejad, Michael Graef, Alexander Kloes

Proceedings of the 22nd International Conference Mixed Design of Integrated Circuits & Systems, 2015

2014

Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects.

Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez

Microelectron. J., 2014

A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current.

Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez

Microelectron. J., 2014

Improved analytical potential modeling in double-gate tunnel-FETs.

Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez

Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems, 2014

3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs.

Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Unified charge model for short-channel junctionless double gate MOSFETs.

Thomas Holtij, Michael Graef, Franziska Hain, Alexander Kloes, Benjamín Iñíguez

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013

Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs.

Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013