Fabian Hosenfeld

According to our database, Fabian Hosenfeld authored at least 5 papers between 2016 and 2017.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2017

Non-iterative NEGF based model for band-to-band tunneling current in DG TFETs.

Fabian Hosenfeld, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime

Proceedings of the 24th International Conference Mixed Design of Integrated Circuits and Systems, 2017

Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs.

Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes

Proceedings of the 24th International Conference Mixed Design of Integrated Circuits and Systems, 2017

2016

Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs.

Fabian Hosenfeld, Michael Graef, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime

Proceedings of the 2016 MIXDES, 2016

Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs.

Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Alexander Kloes, Benjamín Iñíguez

Proceedings of the 2016 MIXDES, 2016

Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation.

Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes

Proceedings of the 46th European Solid-State Device Research Conference, 2016