Min Hyuk Park

According to our database, Min Hyuk Park authored at least 2 papers between 2016 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Hafnia-based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry.

Min Hyuk Park

Proceedings of the International Conference on IC Design and Technology, 2023

2016

Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications.

Franz P. G. Fengler, Milan Pesic, Sergej Starschich, Theodor Schneller, Ulrich Böttger, Tony Schenk, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder

Proceedings of the 46th European Solid-State Device Research Conference, 2016