Milan Pesic

According to our database1, Milan Pesic authored at least 13 papers between 2016 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited).
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents.
Proceedings of the IEEE International Memory Workshop, 2022

2021
Variability sources and reliability of 3D - FeFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2019
Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors.
Proceedings of the Device Research Conference, 2019

2017
Gate stack engineering for emerging polarization based non-volatile memories.
PhD thesis, 2017

Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM.
Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017

Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications.
Proceedings of the 46th European Solid-State Device Research Conference, 2016


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