Uwe Schroeder
Orcid: 0000-0002-6824-2386Affiliations:
- NaMLab gGmbH, Dresden, Germany
According to our database1,
Uwe Schroeder
authored at least 14 papers
between 2007 and 2023.
Collaborative distances:
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Bibliography
2023
2022
Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performance.
Proceedings of the IEEE International Memory Workshop, 2022
Proceedings of the Device Research Conference, 2022
2021
Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application.
Proceedings of the IEEE International Memory Workshop, 2021
2019
Ferroelectric Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub> memories: device reliability and depolarization fields.
Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019
Proceedings of the Device Research Conference, 2019
2018
Proceedings of the 2018 International Conference on IC Design & Technology, 2018
2017
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM.
Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories.
Proceedings of the 47th European Solid-State Device Research Conference, 2017
2016
Proceedings of the 46th European Solid-State Device Research Conference, 2016
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications.
Proceedings of the 46th European Solid-State Device Research Conference, 2016
2013
Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories.
Proceedings of the European Solid-State Device Research Conference, 2013
2007
Microelectron. Reliab., 2007