Mohamed Goudjil

According to our database, Mohamed Goudjil authored at least 7 papers between 2014 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

A Novel Active Learning Method Using SVM for Text Classification.

Mohamed Goudjil, Mouloud Koudil, Mouldi Bedda, Noureddine Ghoggali

Int. J. Autom. Comput., 2018

2014

Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique.

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil

Microelectron. Reliab., 2014

An Accurate Combination of on-the-fly Interface Trap and Threshold Voltage Methods for NBTI Degradation Extraction.

Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Mohamed Goudjil, Bécharia Nadji

J. Electron. Test., 2014

Investigation of defect microstructures responsible for NBTI degradation using effective dipole moment extraction.

Hakim Tahi, Boualem Djezzar, Karim Benmassai, Mohamed Boubaaya, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil

Proceedings of the 9th International Design and Test Symposium, 2014

Reliability analysis of CMOS inverter subjected to AC & DC NBTI stresses.

Amel Chenouf, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Hakim Tahi, Mohamed Goudjil

Proceedings of the 9th International Design and Test Symposium, 2014

Reaction-diffusion model for interface traps induced by BTS stress including H⁺, H and H2 as diffusion species.

Mohamed Boubaaya, Hakim Tahi, Boualem Djezzar, Karim Benmassai, Abdelmadjid Benabdelmoumene, Mohamed Goudjil, Djamila Doumaz, Abdelhak Feraht Hemida

Proceedings of the 9th International Design and Test Symposium, 2014

Does NBTI effect in MOS transistors depend on channel length?

Abdelmadjid Benabdelmoumene, Boualem Djezzar, Hakim Tahi, Amel Chenouf, Mohamed Goudjil, Rafik Serhane, Fayçal Hadj Larbi, Mohamed Kechouane

Proceedings of the 26th International Conference on Microelectronics, 2014