Moncef Kadi

According to our database, Moncef Kadi authored at least 18 papers between 2009 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

CAD Modeling of a Wafer-Level Packaging GaN Transistors for Electrothermal Simulation Using the Finite Element Method.

Mohamed Belguith, Sonia Eloued, Moncef Kadi, Jaleleddine Ben Hadj Slama, Mahmoud Hamouda

Proceedings of the 21st International Conference on Synthesis, 2025

UHF RFID Tag Antenna Performance Near Metallic Environments: A Comprehensive Characterization.

Hanen Shall, Emna Jaouadi, Sahbi Baccar, Moncef Kadi

Proceedings of the IEEE International Conference on RFID Technology and Applications, 2025

Investigation of Power Levels and Phase Variations from Interference between Bi-Static Ambient Backscattered and Direct Signals in 5G-NR Free Space Scenario.

Sahbi Baccar, Mariem Lefki, Moni Sankar Saha, Hanen Shall, Moncef Kadi, Mohamed Ghorbel

Proceedings of the IEEE International Conference on RFID Technology and Applications, 2025

Investigation of Displacement Effects of Tag on Reader: A Study on Antenna Performance and Power Dynamics.

Moni Sankar Saha, Moncef Kadi, Sahbi Baccar, Mariem Lefki, Marjorie Grzeskowiak

Proceedings of the 2025 5th International Conference on Electrical, 2025

Study of Fast Charging Profiles for Lithium-ion Battery in Electric Vehicle Applications.

Kawther Fahem, Yacine Azzouz, Moncef Kadi

Proceedings of the 2025 5th International Conference on Electrical, 2025

Hardware architecture for LE Uncoded PHYs version5.3 Transmitter.

Ibtissam Belakhdhar, Moncef Kadi, Habib Boulzazen, Sahbi Baccar, Francois Lefevre, François Hedin

Proceedings of the 2025 Computing, 2025

Development and Validation of a Low-Cost, Low-Power Patient Monitoring System Using AmBC Technique.

Moni Sankar Saha, Mariem Lefki, Sahbi Baccar, Moncef Kadi

Proceedings of the 22nd IEEE International Multi-Conference on Systems, Signals & Devices, 2025

2024

A Neural Network-Empowered Inverse FSS Design and Synthesis Approach for 5G Shielding Applications.

Hanen Shall, Hiba Hawess, Sahbi Baccar, Moncef Kadi

IEEE Access, 2024

A First Prototype of an Ambient Backscatter Communication Tag Working in 5G-NR Frequency: Experimental Test and Power Levels Measurements.

Mariem Lefki, Sahbi Baccar, Moncef Kadi, Hanen Shall, Mohamed Ghorbel

Proceedings of the IEEE International Conference on RFID Technology and Applications, 2024

2022

5G Ambient Backscatter Communications: Achievable Range and Power Levels in an Urban Environment.

Mariem Lefki, Sahbi Baccar, Hanen Shall, Mohamed Ghorbel, Moncef Kadi

Proceedings of the 12th IEEE International Conference on RFID Technology and Applications, 2022

2018

Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests.

Jian-Zhi Fu, François Fouquet, Moncef Kadi, Pascal Dherbécourt

Microelectron. Reliab., 2018

Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests.

Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama

Microelectron. Reliab., 2018

2015

High frequency characterization and modeling via measurements of power electronic capacitors under high bias voltage and temperature variations.

Fahim Hami, Habib Boulzazen, Moncef Kadi

Proceedings of the 2015 IEEE International Instrumentation and Measurement Technology Conference (I2MTC) Proceedings, 2015

Study of the radiated emissions of an electric vehicle battery charger during the charge cycle.

Hanen Shall, Moncef Kadi

Proceedings of the 12th IEEE International Multi-Conference on Systems, Signals & Devices, 2015

2013

Experimental investigation of Zener diode reliability under pulsed Electrical Overstress (EOS).

Jian-Zhi Zhu, François Fouquet, Blaise Ravelo, Ali Alaeddine, Moncef Kadi

Microelectron. Reliab., 2013

2011

Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress.

Samh Khemiri, Moncef Kadi, Anne Louis

Microelectron. Reliab., 2011

2010

Characteristics degradation of the SiGe HBT under electromagnetic field stress.

Ali Alaeddine, Moncef Kadi, Kaouther Daoud, B. Beydoun

Microelectron. Reliab., 2010

2009

Effects of electromagnetic near-field stress on SiGe HBT's reliability.

Ali Alaeddine, Moncef Kadi, Kaouther Daoud, B. Mazari

Microelectron. Reliab., 2009