Muhammad Alshahed

According to our database, Muhammad Alshahed authored at least 4 papers between 2014 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates.

Lars Heuken, Muhammad Alshahed, Alessandro Ottaviani, Mohammed Alomari, Joachim N. Burghartz, Ulrike Waizmann, Thomas Reindl

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

Comprehensive compact electro-thermal GaN HEMT model.

Muhammad Alshahed, M. Dakran, Lars Heuken, Mohammed Alomari, Joachim N. Burghartz

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates.

Muhammad Alshahed, Mohammed Alomari, Christine Harendt, Joachim N. Burghartz, C. Wachter, T. Bergunde, S. Lutgen

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2014

Thermal characterization and modeling of ultra-thin silicon chips.

Muhammad Alshahed, Zili Yu, Horst Rempp, Harald Richter, Christine Harendt, Joachim N. Burghartz

Proceedings of the 44th European Solid State Device Research Conference, 2014