Mohammed Alomari

According to our database, Mohammed Alomari authored at least 5 papers between 2012 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure.

Mamta Pradhan, Matthias Moser, Mohammed Alomari, Joachim N. Burghartz, Ingmar Kallfass

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2018

Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates.

Lars Heuken, Muhammad Alshahed, Alessandro Ottaviani, Mohammed Alomari, Joachim N. Burghartz, Ulrike Waizmann, Thomas Reindl

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

Comprehensive compact electro-thermal GaN HEMT model.

Muhammad Alshahed, M. Dakran, Lars Heuken, Mohammed Alomari, Joachim N. Burghartz

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates.

Muhammad Alshahed, Mohammed Alomari, Christine Harendt, Joachim N. Burghartz, C. Wachter, T. Bergunde, S. Lutgen

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2012

Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure.

Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn

Microelectron. Reliab., 2012