Nabil Sghaier

According to our database, Nabil Sghaier authored at least 10 papers between 2006 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2016

Evaluating NDVI Data Continuity Between SPOT-VEGETATION and PROBA-V Missions for Operational Yield Forecasting in North African Countries.

Michele Meroni, Dominique Fasbender, Riad Balaghi, Mustapha Dali, Myriam Haffani, Ismael Haythem, Josh Hooker, Mouanis Lahlou, Raul Lopez-Lozano, Hamid Mahyou, Moncef Ben Moussa, Nabil Sghaier, Talhaoui Wafa, Olivier Leo

IEEE Trans. Geosci. Remote. Sens., 2016

2015

Impact of defect on I(V) instabilities observed on Ti/4H-SiC high voltage Schottky diodes.

N. Abdelwahed, M. Troudi, Nabil Sghaier, Abdelkader Souifi

Microelectron. Reliab., 2015

2013

Remote Sensing Based Yield Estimation in a Stochastic Framework - Case Study of Durum Wheat in Tunisia.

Michele Meroni, Eduardo Marinho, Nabil Sghaier, Michel M. Verstraete, Olivier Leo

Remote. Sens., 2013

Effect of illumination on the electron transport mechanisms in Silicon nanocrystal-based nanopixels.

S. Chatbouri, M. Troudi, Nabil Sghaier, A. Kalboussi, Dominique Drouin, V. Aimez, A. Souifi

Proceedings of the 10th International Multi-Conferences on Systems, Signals & Devices, 2013

2009

Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator.

Aimen Boubaker, M. Troudi, Nabil Sghaier, A. Souifi, Nicolas Baboux, A. Kalboussi

Microelectron. J., 2009

2007

Macro-modeling for the compact simulation of single electron transistor using SIMPLORER.

M. Troudi, Nabil Sghaier, Aimen Boubaker, A. Souifi, A. Kalboussi

Microelectron. J., 2007

Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique.

Nabil Sghaier, Liviu Militaru, M'Hamed Trabelsi, Yacoubi Yacoubi, Souifi Souifi

Microelectron. J., 2007

A new SIMPLORER model for single-electron transistors.

Aimen Boubaker, Nabil Sghaier, M. Troudi, A. Kalboussi, Nicolas Baboux, A. Souifi

Microelectron. J., 2007

2006

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates.

Nabil Sghaier, M'Hamed Trabelsi, Noureddine Yacoubi, Jean-Marie Bluet, Abdelkader Souifi, Gérard Guillot, Christophe Gaquière, J. C. DeJaeger

Microelectron. J., 2006

Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications.

Nabil Sghaier, M'Hamed Trabelsi, Ne. Sghaier, Liviu Militaru, Abdelkader Souifi, Adel Kalboussi, Noureddine Yacoubi

Microelectron. J., 2006