A. Souifi

According to our database, A. Souifi authored at least 16 papers between 2001 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement.

Camille Laguna, Mathieu Bernard, Julien Garrione, Niccolo Castellani, Valentina Meli, S. Martin, François Aussenac, D. Rouchon, N. Rochat, Emmanuel Nolot, Guillaume Bourgeois, Marie Claire Cyrille, Liviu Militaru, A. Souifi, François Andrieu, Gabriele Navarro

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance.

Camille Laguna, Mathieu Bernard, Nicolas Bernier, D. Rouchon, N. Rochat, Julien Garrione, A. Jannaud, Emmanuel Nolot, Valentina Meli, Niccolo Castellani, C. Sabbione, Guillaume Bourgeois, Marie Claire Cyrille, Liviu Militaru, A. Souifi, Gabriele Navarro, Etienne Nowak

Proceedings of the IEEE International Memory Workshop, 2021

2017

Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics.

Slah Hlali, Neila Hizem, Liviu Militaru, A. Kalboussi, Abdelkader Souifi

Microelectron. Reliab., 2017

Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals.

S. Chatbouri, M. Troudi, A. Kalboussi, A. Souifi

Microelectron. Reliab., 2017

Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor.

Getenet Tesega Ayele, Stéphane Monfray, Frédéric Boeuf, Jean-Pierre Cloarec, Serge Ecoffey, Dominique Drouin, Etienne Puyoo, Abdelkader Souifi

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

Impact of defect on I(V) instabilities observed on Ti/4H-SiC high voltage Schottky diodes.

N. Abdelwahed, M. Troudi, Nabil Sghaier, Abdelkader Souifi

Microelectron. Reliab., 2015

3D microelectronic with BEOL compatible devices.

Dominique Drouin, Mohamed Amine-Bounouar, Gabriel Droulers, M. Labalette, Michel Pioro-Ladriere, A. Souifi, Serge Ecoffey

Proceedings of the 33rd IEEE VLSI Test Symposium, 2015

2013

Effect of illumination on the electron transport mechanisms in Silicon nanocrystal-based nanopixels.

S. Chatbouri, M. Troudi, Nabil Sghaier, A. Kalboussi, Dominique Drouin, V. Aimez, A. Souifi

Proceedings of the 10th International Multi-Conferences on Systems, Signals & Devices, 2013

2009

Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator.

Aimen Boubaker, M. Troudi, Nabil Sghaier, A. Souifi, Nicolas Baboux, A. Kalboussi

Microelectron. J., 2009

Discussion on the performances of hybrid SET-MOSFET Voltage Controlled Oscillators.

Wei Xuan, Françis Calmon, Nicolas Baboux, Abdelkader Souifi

Proceedings of the 16th IEEE International Conference on Electronics, 2009

2007

Macro-modeling for the compact simulation of single electron transistor using SIMPLORER.

M. Troudi, Nabil Sghaier, Aimen Boubaker, A. Souifi, A. Kalboussi

Microelectron. J., 2007

Blue/green luminescence based on Zn(S)Se/GaAs heterostructures.

Neila Hizem, A. Kalboussi, R. Adhiri, A. Souifi

Microelectron. J., 2007

A new SIMPLORER model for single-electron transistors.

Aimen Boubaker, Nabil Sghaier, M. Troudi, A. Kalboussi, Nicolas Baboux, A. Souifi

Microelectron. J., 2007

2006

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates.

Nabil Sghaier, M'Hamed Trabelsi, Noureddine Yacoubi, Jean-Marie Bluet, Abdelkader Souifi, Gérard Guillot, Christophe Gaquière, J. C. DeJaeger

Microelectron. J., 2006

Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications.

Nabil Sghaier, M'Hamed Trabelsi, Ne. Sghaier, Liviu Militaru, Abdelkader Souifi, Adel Kalboussi, Noureddine Yacoubi

Microelectron. J., 2006

2001

Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture.

Liviu Militaru, A. Souifi, M. Mouis, Alain Chantre, G. Brémond

Microelectron. Reliab., 2001